CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...
New vertical device architecture promises stable, ultra-dense semiconductor stacking for future AI and high-performance ...
Tech Xplore on MSN
Key transistor for next-generation 3D stacked semiconductors operates without current leakage
A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors ...
Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.
Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports ...
PRIMETIMER on MSN
How could NASA’s electronics survive the extreme cold and radiation of Europa? New SiGe technology explained
NASA’s new silicon-germanium (SiGe) electronics can operate at -180°C and withstand 5 Mrad radiation, enabling autonomous exploration of Europa and other ocean worlds.
At the VLSI Symposium being held this week in Kyoto, Japan, Renesas Technology Corp. announced it has developed what it calls an “extremely high-performance transistor technology” with low-cost ...
At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive. The new ...
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