Abstract: The pursuit of higher temperatures, frequencies, and power densities in power converters has significantly elevated the performance demands on power modules. Existing designs struggle to ...
The new 1200 V SiC MOSFET power modules in SOT-227 packages target high-efficiency automotive, energy, and industrial systems. Vishay Intertechnology has introduced five new 1200 V silicon carbide ...
MALVERN, Pa., Jan. 28, 2026 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (VSH) today introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high ...
ABSTRACT: We present the complete methodology to propose an efficient electrothermal model of the Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET), largely used in high ...
The third-generation series of QSiC MOSFET modules from SemiQ Inc. offer current capabilities of up to 608 A and a junction-to-case thermal resistance of just 0.07ºC/W to address the growing demand ...
SemiQ Inc. expanded its family of 1,200-V Gen3 silicon-carbide (SiC) MOSFETs with five SOT-227 modules that offer on-resistance (R DS(on)) values of 7.4, 14.5, and 34 mΩ. The GCMS modules, which ...
MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium to ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results